Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon-Reference-Cited by-同舟云学术

Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon

Published:2017 Issue:12 Volume:66 Page:950-956
ISSN:0514-5163
Container-title:Journal of the Society of Materials Science, Japan
language:en
Short-container-title:J. Soc. Mat. Sci., Japan

Author:

TAMURA Yohei¹,TAKAMOTO So¹,IMAIZUMI Shunsuke¹,SAITO Reiko²,ITO Sachiyo²,HATANO Asuka¹,IZUMI Satoshi¹

Affiliation:

1. Department of Mechanical Engineering, Graduate School of Engineering, the University of Tokyo

2. TOSHIBA CORPORATION Corporate Manufacturing Engineering Center

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/jsms/66/12/66_950/_pdf

Reference17 articles.

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3. 3) H. Tanaka, M. Inoue, S. Takamoto, A. Hatano and S. Izumi, “Analysis of oxidized film formation and evaluation of intrinsic stress in a-Si layer of semiconductor microscopic patterned structures using molecular dynamics method”, Journal of the Society of Materials Science, Japan, Vol. 65, No.2, pp. 127-134 (2016).

4. 4) Eric Johlin, Nouar Tabet, Sebastian Castro-Galnares, Amir Abdallah, Mariana I. Bertoni, Tesleem Asafa, Jefferey C. Grossman, Syed Said and Tonio Buonassisi, “Structural origins of intrinsic stress in amorphous silicon thin films”, Physical Review B, Vol. 85, 075202 (2012).

5. 5) K. Tanaka, E. Maruyama, T. Shimada, H. Okamoto， “Amorphous silicon”, (1993), Ohmusha.