Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide-Reference-Cited by-同舟云学术

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Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide

Published:2016 Issue:9 Volume:65 Page:631-637
ISSN:0514-5163
Container-title:Journal of the Society of Materials Science, Japan
language:en
Short-container-title:J. Soc. Mat. Sci., Japan

Author:

KANEKO Kentaro¹,ODA Masaya²,TAKATSUKA Akio²,HITORA Toshimi²,FUJITA Shizuo¹

Affiliation:

1. Photonics and Electronics Science and Engineering Center, Kyoto University

2. FLOSFIA INC.

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/jsms/65/9/65_631/_pdf

Reference36 articles.

1. 1) Y. Kokubun, K. Miura, F. Endo and S. Nakagomi, “Sol-gel prepared β-Ga₂O₃ thin films for ultraviolet photodetectors”, Applied Physics Letters, Vol.90, Iss.3, 031912(1-3) (2007).

2. 2) C.-Cheng Chen and C.-Chen Chen, “Morphology and electrical properties of pure and Ti-doped gas-sensitive Ga₂O₃ film prepared by rheotaxial growth and thermal oxidation”, Journal of Materials Rersearch, Vol.19, No.4, pp.1105-1117 (2004).

3. 3) M. Ogita, K. Higo, Y. Nakanishi and Y. Hatanaka, “Ga₂O₃ thin film for oxygen sensor at high temperature”, Applied Surface Science, Vol.175-176, pp.721-725 (2001).

4. 4) K. Matsuzaki, H. Yanagi, T. Kamiya, H. Hiramatsu, K. Nomura, M. Hirano and H. Hosono, “Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga₂O₃”, Applied Physics Letters, Vol.88, Iss.9, 092106(1-3) (2006).

5. 5) H. Hayashi, R. Huang, H. Ikeno, F. Oba, S. Yoshioka, I. Tanaka and S. Sonoda, “Room temperature ferromagnetism in Mn-doped γ-Ga₂O₃ with spinel structure”, Applied Physics Letters, Vol.89, Iss.18, 181903(1-3) (2006).

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