Growth of Ga<sub>2</sub>O<sub>3</sub> Thin Films on Si Substrates by Mist CVD Technique
Author:
Affiliation:
1. Photonics and Electronics Science and Engineering Center, Kyoto Univ.
Publisher
Society of Materials Science, Japan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/jsms/71/10/71_835/_pdf
Reference31 articles.
1. 1) R．Roy, V. G. Hill and E. F. Osborn, “Polymorphism of Ga2O3 and the System Ga2O3—H2O” Journal of the American Chemical Society, Vol.47, No.3, pp.719-722 (1952).
2. 2) T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda and M. Higashiwaki, “Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy” Japanese Journal of Applied Physics, Vol.54, No.11, pp.112601(1-5) (2015).
3. 3) E. G. Víllora, K. Shimamura, Y. Yoshikawa, K. Aoki and N. Ichinose, “Large-size β-Ga2O3 single crystals and wafers” Journal of Crystal Growth, Vol.270, Iss.3-4, pp.420-426 (2004).
4. 4) A. Segura, L. Artús, R. Cuscó, R. Goldhahn and M. Feneberg, "Band gap of corundumlike α-Ga2O3 determined by absorption and ellipsometry" Physical Review Materials Vol.1, pp.024604(1-6) (2017).
5. 5) M. Oda, R. Tokuda, H. Kambara, T. Tanikawa, T. Sasaki and T. Hitora, “Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1mΩcm-2 grown by MIST EPITAXY®" Applied Physics Express, Vol.9, No.2, pp.021101(1-3) (2016).
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