Toward a New Understanding of Dislocation Behavior in Inorganic Semiconductor Materials and Further Development of Novel Functionalities from Dislocations-Reference-Cited by-同舟云学术

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Toward a New Understanding of Dislocation Behavior in Inorganic Semiconductor Materials and Further Development of Novel Functionalities from Dislocations

Published:2022-09-15 Issue:9 Volume:71 Page:742-748
ISSN:0514-5163
Container-title:Journal of the Society of Materials Science, Japan
language:en
Short-container-title:J. Soc. Mat. Sci., Japan

Author:

NAKAMURA Atsutomo¹

Affiliation:

1. Department of Mechanical Science and Bioengineering, School of Engineering Science, Osaka University

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/jsms/71/9/71_742/_pdf

Reference19 articles.

1. 1) Y. A. Osip’yan, V. F. Petrenko, A. V. Zaretskiǐ and R. W. Whitworth, “Properties of II-VI semiconductors associated with moving dislocations”, Advanced Physics, 35, pp. 115-188 (1986).

2. 2) L. Carlsson and C. Svensson, “Increase of Flow Stress in ZnO under Illumination”, Solid State Communications, 7, pp. 177-179 (1969).

3. 3) C. N. Ahlquist, M. J. Carroll and P. Stroempl, “The photoplastic effect in wurtzite and sphalerite structure II-VI compounds”, Journal of Physics and Chemistry of Solids, 33, pp. 337-342 (1972).

4. 4) Y. A. Osip’yan and V. F. Petrenko, “Nature of Photoplastic Effect”, Soviet Physics JETP, 36, pp. 916-920 (1973).

5. 5) S. Koubaiti, J. J. Couderc, C. Levade and G. Vanderschaeve, “Photoplastic effect and Vickers microhardness in III-V and II-VI semiconductor compounds”, Materials Science and Engineering, 234, pp. 865-868 (1997).

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