Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts-Reference-Cited by-同舟云学术

Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts

Published:2020-10-15 Issue:10 Volume:69 Page:717-720
ISSN:0514-5163
Container-title:Journal of the Society of Materials Science, Japan
language:en
Short-container-title:J. Soc. Mat. Sci., Japan

Author:

SHIOJIMA Kenji¹

Affiliation:

1. Graduate School of Electrical and Electronics Engineering, Faculty of Engineering, University of Fukui

Publisher

Society of Materials Science, Japan

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/jsms/69/10/69_717/_pdf

Reference13 articles.

1. 1) Y. Koide and M. Murakami，“Fabrication techniques of Ohmic contact materials for GaN”，Oyo Buturi，Vol. 69，No.11，pp. 1335-1336 (2000)．

2. 2) T. Sawada, Y. Ito, N. Kimura, K. Imai, K. Suzuki, and S. Sakai, “Characterization of metal/GaN Schottky interfaces based on I–V–T characteristics”, Applied Surface Science, Vol. 190, pp. 326-329 (2002).

3. 3) K. Shiojima, T. Sugahara and S. Sakai, " Large Schottky barriers for Ni/p-GaN contacts ", Applied Physics. Letters, Vol. 74, pp. 1936-1938 (1999).

4. 4) K. Shiojima, T. Sugahara and S. Sakai, "Current transport mechanism of p-GaN Schottky contacts ", Applied Physics. Letters, Vol. 77, pp. 4353-4355 (2000).

5. 5) K. Shiojima, S. Sugitani and S. Sakai, "ICTS measurements for p-GaN Schottky contacts", Applied Surface Science, Vol. 190, pp. 318-321 (2002).

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