S-Band 300-W GaN HEMT Internally Matched Power Amplifier
Author:
Funder
Agency for Defense Development
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2020.31.1.43
Reference9 articles.
1. D. W. Runton, B. Trabert, J. B. Shealy, and R. Vetury, “History of GaN: High-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond,” IEEE Microwave Magazine, vol. 14, no. 3, pp. 82-93, May 2013. 10.1109/MMM.2013.2240853
2. H. S. Kang, K. T. Bae, I. J. Lee, H. W. Cha, B. G. Min, and D. M. Kang, et al., “X-band 50 W pulse-mode GaN HEMT internally matched power amplifier,” The Journal of Korean Institute of Electromagnetic Engineering and Science, vol. 27, no. 10, pp. 892-898, Oct. 2016 10.5515/KJKIEES.2016.27.10.892
3. M. S. Hashmi, F. M. Ghannouchi, P. I. Tasker, and K. Rawat, “High reflectrive load-pull,” IEEE Microwave Magazine, vol. 12, no. 4, pp. 96-107, Jun. 2011. 10.1109/MMM.2011.940595
4. G. Simpson, “Hybrid active tuning load pull,” in 77th ARFTG Microwave Measurement Conference, Baltimore, MD, Jun. 2011, pp. 1-4. 10.1109/ARFTG77.2011.6034576, PMC4781353
5. Maury Microwave, “MT2000 mixed-signal active load pull system (Version 2.11.00).” Available: https://www.maurymw.com
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2. Scalable GaN HEMT Large-Signal Model for 140-W Power Devices;The Journal of Korean Institute of Electromagnetic Engineering and Science;2020-12
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