2.5～6 GHz 20-W Wideband GaN HEMT Internally Matched Power Amplifier
Author:
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2019.30.11.865
Reference10 articles.
1. K. T. Bae, D. W. Kim, “2～6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors,” International Journal of RF and Microwave Computer-Aided Engineering, vol. 26, no. 5, pp. 456-465, Mar. 2016. 10.1002/mmce.20989
2. R. Giofre, P. Colantonio, and F. Giannini, “1～6 GHz ultrawideband 4 W single-ended GaN power amplifier,” Microwave and Optical Technology Letters, vol. 56, no. 1, pp. 215-217, Jan. 2014. 10.1002/mop.28080
3. H. T. A. Nia, V. Nayyeri, “A 0.85～5.4 GHz 25 W GaN power amplifier,” IEEE Microwave and Wireless Components Letters, vol. 28, no. 3, pp. 251-253, Mar. 2018. 10.1109/LMWC.2018.2794818
4. M. T. Arnous, S. E. Barbin, and G. Boeck, “Design of multi-octave highly efficient 20 watt harmonically tuned power amplifier,” in 2016 21st International Conference on Microwave, Radar and Wireless Communications(MIKON), Krakow, May 2016, pp. 1-4. 10.1109/MIKON.2016.7492069
5. M. Sakalas, S. Preis, D. Gruner, and G. Boeck, “Iterative design of a harmonically tuned multi-octave broadband power amplifier,” in 2014 IEEE MTT-S International Microwave Symposium(IMS2014), Tampa, FL, Jun. 2014, pp. 1-4. 10.1109/MWSYM.2014.6848503
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