Publisher
Korean Institute of Electromagnetic Engineering and Science
Reference6 articles.
1. Y. Yamashita, A. Endoh, K. Sinohara, K. Hikosaka, T. Matsui, and S.
Hiyamizu, et al., "Pseudomorphic In0.52
Al0.48As/In0.7Ga0.3As HEMTs with an
ultrahigh fT of 562 GHz," IEEE Electron
Device Letters, vol. 23, no. 10, pp. 573-575, Oct. 2002. 10.1109/LED.2002.802667
2. W. R. Deal, K. Leong, V. Radisic, S. Sarkozy, B. Gorospe, and J.
Lee, et al., "Low noise amplification at 0.67 THz using 30 nm InP HEMTs,"
IEEE Microwave and Wireless Components Letters, vol. 21,
no. 7, pp. 368-370, Jul. 2011. 10.1109/LMWC.2011.2143701
3. A. Leuther, A. Tessmann, M. Dammann, W. Reinert, M. Schlechtweg, and
M. Mikulla, et al., "70 nm low-noise metamorphic HEMT technology on 4 inch GaAs
wafers," in International Conference on Indium Phosphide and Related
Materials, Santa Barbara, 2003, pp. 215-218.
4. H. S. Yoon, J. Y. Shim, D. M. Kang, J. Y. Hong, and K. H. Lee,
"Characteristics of 80 nm T-gate metamorphic HEMTs with 60% indium channel," in
2007 IEEE 19th International Conference on Indium Phosphide &
Related Materials, Matsue, 2007, pp. 110-113. 10.1109/ICIPRM.2007.381135
5. H. Fourre, F. Diette, and A. Cappy, "Selective wet etching of
lattice-matched InGaAs/InAlAs and metamorphic InGaAs/InAlAs on GaAs substrate
using succinic Aic/Hydrogen peroxide solution," Journal of Vacuum
Science & Technology B: Microelectronics and Nanometer Structures
Processing, Measurement, and Phenomena, vol. 14, no. 5, pp.
3400-3402, Sep./Oct. 1996. 10.1116/1.588543