Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules
Author:
Affiliation:
1. Medcom Company, Jutrzenki 78A, 02-230 Warsaw, Poland
2. University of Technology, Institute of Control and Industrial Electronics, Koszykowa 75, 00-662 Warsaw, Poland
Publisher
Polish Academy of Sciences Chancellery
Subject
Artificial Intelligence,Computer Networks and Communications,General Engineering,Information Systems,Atomic and Molecular Physics, and Optics
Link
https://journals.pan.pl/Content/122717/PDF/BPASTS_2022_70_2_2593.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flexible Rogowski current probes in measurements of ultra-fast SiC MOSFET modules – limitations and challenges;PRZEGLĄD ELEKTROTECHNICZNY;2024-07-24
2. A Datasheet-Driven Electrothermal Averaged Model of a Diode–MOSFET Switch for Fast Simulations of DC–DC Converters;Electronics;2023-12-29
3. Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs;Engineering Research Express;2023-09-01
4. Dynamic performance evaluation of ultra-fast SiC MOSFET power module – a comprehensive approach;PRZEGLĄD ELEKTROTECHNICZNY;2023-05-19
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