A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones-Reference-Cited by-同舟云学术

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A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones

Published:1997-07-01 Issue:2 Volume:19 Page:35-47
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Maeng Sung-Jae Maeng,Lee Chang-Seok Lee,Youn Kwang-Jun Youn,Kim Haecheon Kim,Mun Jae-Kyung Mun,Lee Jae-Jin Lee,Pyun K. E. Pyun

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones

2. Reduction of noise and distortion in amplifiers using adaptive cancellation

3. Linearisation of RF multicarrier amplifiers using Cartesian feedback

4. 3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones

5. 2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Highly Efficient GaAs HBT MMIC Balanced Power Amplifier for W-CDMA Handset Applications;ETRI Journal;2009-10-05

2. Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications;Semiconductor Science and Technology;2005-05-23

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