40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth-Reference-Cited by-同舟云学术

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40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth

Published:2009-12-04 Issue:6 Volume:31 Page:765-769
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Kwon Yong-Hwan,Choe Joong-Seon,Sim Jae-Sik,Kim Sung-Bock,Yun HoGyeong,Choi Kwang-Seong,Choi Byung-Seok,Nam Eun-Soo

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. EAM-integrated DFB laser modules with more than 40-GHz bandwidth

2. Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers

3. Electroabsorption modulated laser for long transmission spans

4. Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach, and long-haul applications

5. InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes

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3. Novel Electroabsorption Modulator Design Based on Coplanar Waveguide Configuration;2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT);2019-08

4. Electro-absorption Modulated Lasers with High Immunity to Residual Facet Reflection by Using Lasers with Partially Corrugated Gratings;IEEE Photonics Journal;2017

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