380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials
Reference9 articles.
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1. Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients;Crystals;2021-11-15
2. New view on the variation of forward conduction mechanisms derived from electrical stress in UV-A light emitting diodes;Superlattices and Microstructures;2019-06
3. Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes;Superlattices and Microstructures;2017-12
4. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes;Superlattices and Microstructures;2017-11
5. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission;Journal of Crystal Growth;2016-07
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