Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. High Breakdown Voltage ($≫$1000 V) Semi-Superjunction MOSFETs Using 600-V Class Superjunction MOSFET Process
2. Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance
3. A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
4. A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate
5. A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs
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1. Charge Balance and UIS Robustness of Trench Field Plate Power MOSFETs;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
2. High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications;Transactions on Electrical and Electronic Materials;2016-10-25
3. Sensorless Sine-Wave Controller IC for PM Brushless Motor Employing Automatic Lead-Angle Compensation;ETRI Journal;2015-12-01
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