Effect of Hydrostatic Pressure on Characteristics Parameters of Sn/p-Si Schottky Diodes
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/68/i=1/a=011/pdf
Reference28 articles.
1. The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect
2. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
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3. The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer;Acta Physica Polonica A;2017-09
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