Characteristics of Si d-Layers Embedded in GaAs-Reference-Cited by-同舟云学术

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Characteristics of Si d-Layers Embedded in GaAs

Published:1999 Issue:1 Volume:T79 Page:99
ISSN:0031-8949
Container-title:Physica Scripta
language:en
Short-container-title:Physica Scripta

Author:

Pozina G.,Holtz P. O.,Sernelius B.,Buyanov A. V.,Radamson H. H.,Madsen L. D.,Monemar B.,Thordson J.,Andersson T. G.

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/1999/i=T79/a=021/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD;Journal of Materials Science: Materials in Electronics;2021-02-06

2. Electrical conduction properties of Si δ-doped GaAs grown by MBE;Physica B: Condensed Matter;2009-11

3. Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures;Applied Physics Letters;1999-12-13

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