Effect of proton doping and heat treatment on the structure of single crystal silicon

Author:

Asadchikov Victor E.,Dyachkova Irina G.,Zolotov Denis A.,Krivonosov Yuri S.,Bublik Vladimir T.,Shikhov Alexander I.

Abstract

The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference of this approach is the possibility to rapidly obtain reliable experimental results which were confirmed using X-ray topography. Data have been presented for the condition of the damaged layer in n-type silicon single crystals (r = 100 W × cm) having the (111) orientation and a thickness of 2 mm after proton implantation at energies E = 200, 300 and 100 + 200 + 300 keV and dose D = 2 × 1016 cm-2 and subsequent heat treatment in the T = 100–900 °C range. Using the method of integral characteristics we have revealed a nonmonotonic dependence of the integral characteristics of the damaged layer, i.e., the mean effective thickness Leff and the mean relative deformation Da/a, on the annealing temperature, the maximum deformation being observed for ~300 °C. The results have allowed us to make a general assessment of the damaged layer condition after heat treatment.

Publisher

Pensoft Publishers

Subject

Automotive Engineering

Reference25 articles.

1. Kozlovski V. V. Modifitsirovanie poluprovodnikov puchkami protonov [Modification of semiconductors by proton beams]. St. Petersburg: Nauka, 2003. 268 p. (In Russ.)

2. Smirnov I. S., Kuznetsov N. V., Soloviev G. G. Formation of layers with special properties in silicon by implantation of protons and heat treatment. XVI Vsesoyuznaya konferentsiya po fizike vzaimodeistviya zaryazhennykh chastits s kristallom = XVI All-Union conference on physics of interaction of charged particles with crystal. Moscow: MGU, 1988, pp. 78–81. (In Russ.)

3. Silicon on insulator material technology

4. Gubarev V., Semenov A., Surma A., Stolbunov V. Technology of proton irradiation and the possibility of its application to improve the characteristics of power diodes and thyristors. Silovaya Elektronika. 2011, no. 5, pp. 108–111. (In Russ.)

5. Smirnov I. S., Soloviev G. G., Novoselova E. G., Gurinov D. E. Formation of layers with special properties in silicon by implantation of protons and heat treatment. VII Mezhnatsional’noe soveshchanie «Radiatsionnaya fizika tverdogo tela» = VII International Meeting «Radiation physics of solids». Moscow: MGIEM, 1997, pp. 230–231. (In Russ.)

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