Polycrystalline ZnSxSe1−x thin films deposited on ITO glass by MBE
Author:
Publisher
Zhejiang University Press
Subject
General Engineering
Link
http://link.springer.com/content/pdf/10.1631/jzus.2003.0131.pdf
Reference6 articles.
1. Chaudhari, G. N., Sardesai, S. N., Sathaye, S. D. and Rao, V. J., 1992. Structural properties of ZnSxSe1−x thin films on GaAs (110) substrate.J. Materials Science,27:4647–4650.
2. Gupta, P., Bhattacharyya, D., Chaudhuri, S. and Pal, A. K., 1992. Preparation and characterization of polycrystalline ZnSxSe1−x films prepared by a two-zone hot wall technique.Thin Solid Films,221:154–159.
3. Ihanus, J., Ritala, M., Leskelä, M. and Rauhala, E., 1997. ALE growth of ZnS1−xSex thin films by substituting surface sulfur with elemental selenium.Applied Surface Science,112:154–158.
4. Ivanov, S., Toropov, A., Sorokin, S., Shubina, T., Lebedev, A., Kop'er, P., Alferov, Z., Luganer, H. J., Waag, A. and Landwehr, G., 1998. ZnSe-based blue-green lasers with a short-period superlattice waveguide.Appl. Phys. Lett.,73(15):2104–2106.
5. Li, J. M., Chiang, J. D., Su, Y. K. and Yokoyama, M., 1994. The preparation of ZnS thin films on an indium tin oxide/glass substrate by low-pressure metalorganic chemical vapor deposition.J. Cryst. Growth,137: 421–426.
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