Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries-Reference-Cited by-同舟云学术

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Atom Probe Tomography Studies on the Cu(In,Ga)Se₂ Grain Boundaries

Published:2013-04-22 Issue:74 Volume: Page:
ISSN:1940-087X
Container-title:Journal of Visualized Experiments
language:en
Short-container-title:JoVE

Author:

Cojocaru-Mirédin Oana,Schwarz Torsten,Choi Pyuck-Pa,Herbig Michael,Wuerz Roland,Raabe Dierk

Publisher

MyJove Corporation

Subject

General Immunology and Microbiology,General Biochemistry, Genetics and Molecular Biology,General Chemical Engineering,General Neuroscience

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlative microscopy and monitoring of segregation processes in optoelectronic semiconductor materials and devices;Journal of Applied Physics;2023-03-28

2. A Quantitative Investigation of Functionalized Glazing Stacks by Atom Probe Tomography;Advanced Materials Technologies;2022-11-07

3. Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se ₂ Thin‐Film Solar Cells;Advanced Materials;2022-08-17

4. Quantifying lithium enrichment at grain boundaries in Li7La3Zr2O12 solid electrolyte by correlative microscopy;Journal of Power Sources;2022-08

5. Grain Boundaries in Cu(In, Ga)Se 2 : A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy;Advanced Functional Materials;2021-07-16

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