Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley-Reference-Cited by-同舟云学术

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Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley

Published:2023-07-14 Issue:3 Volume:21 Page:884-924
ISSN:1540-3459
Container-title:Multiscale Modeling & Simulation
language:en
Short-container-title:Multiscale Model. Simul.

Author:

Cao Jiachuan¹^ORCID,Cao Li-qun²

Affiliation:

1. Institute of Computational Mathematics and Scientific/Engineering Computing, Academy of Mathematics and Systems Science, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.

2. Corresponding author. LSEC, NCMIS, Institute of Computational Mathematics and Scientific/Engineering Computing, Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China.

Funder

National Natural Science Foundation of China

Publisher

Society for Industrial & Applied Mathematics (SIAM)

Subject

Computer Science Applications,General Physics and Astronomy,Ecological Modeling,Modeling and Simulation,General Chemistry

Reference48 articles.

1. On a simulation scheme for the Boltzmann equation

2. A Convergence Proof for Nanbu’s Simulation Method for the Full Boltzmann Equation

3. MATHEMATICAL PROPERTIES OF INELASTIC SCATTERING MODELS IN LINEAR KINETIC THEORY

4. On Well-Posedness of a Boltzmann-Like Semiconductor Model

5. Global existence for the Vlasov-Poisson equation in 3 space variables with small initial data

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