Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition-Reference-Cited by-同舟云学术

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Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition

Published:2011-10-25 Issue:5 Volume:12 Page:200-203
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Lee Deuk-Hee,Chun Yoon-Soo,Lee Sang-Yeol,Kim Sang-Sig

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201132833920054.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of zinc oxide nanoflower-based electrochemical luminescence cells;Vacuum;2017-03

2. Synthesis and luminescent properties of Eu3+-doped ZnO phosphors;Journal of the Korean Physical Society;2015-05

3. The PL Characteristics of ZnO Thin Film on Flexible Polymer by Pulse Laser Deposition;Transactions on Electrical and Electronic Materials;2012-10-25

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