Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers-Reference-Cited by-同舟云学术

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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Published:2016-10-25 Issue:5 Volume:17 Page:261-269
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Bhuiyan Mohammad Arif Sobhan,Reaz Mamun Bin Ibne,Badal Md. Torikul Islam,Mukit Md. Abdul,Kamal Noorfazila

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201634864483441.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancement of CMOS Transimpedance Amplifier for Optical Receiver;Transactions on Electrical and Electronic Materials;2018-12-19

2. Low Power High-Efficiency Shift Register Using Implicit Pulse-Triggered Flip-Flop in 130 nm CMOS Process for a Cryptographic RFID Tag;Electronics;2016-12-16

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