A Study on Improvement and Degradation of Si/SiO2Interface Property for Gate Oxide with TiN Metal Gate-Reference-Cited by-同舟云学术

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A Study on Improvement and Degradation of Si/SiO2Interface Property for Gate Oxide with TiN Metal Gate

Published:2008-02-29 Issue:1 Volume:9 Page:6-11
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Lee Byung-Hyun,Kim Yong-Il,Kim Bong-Soo,Woo Dong-Soo,Park Yong-Jik,Park Dong-Gun,Lee Si-Hyung,Rho Yong-Han

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO200814364032995.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma;Transactions on Electrical and Electronic Materials;2011-08-25

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