Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
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Published:2006-02-01
Issue:1
Volume:7
Page:1-6
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ISSN:1229-7607
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Container-title:Transactions on Electrical and Electronic Materials
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language:en
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Short-container-title:Transactions on Electrical and Electronic Materials
Author:
Joung Bong-Kyu,Kang Jeong-Won,Hwang Ho-Jung,Kim Sang-Yong,Kwon Oh-Keun
Publisher
The Korean Institute of Electrical and Electronic Material Engineers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials