In-plane Fermi surface mapping of ZrSiS and HfSiS by de Haas-van Alphen oscillations

Abstract

We have conducted a comprehensive experimental investigation of the in-plane de Haas van Alphen quantum oscillations in ZrSiS and HfSiS and compared the results to the ab-initio calculations. We found a moderately good agreement for a set of frequencies located between 100 T and 200 T. These could be associated with extremal orbitals of the electron pockets located around the k_z=\pm\pi/2ckz=±π/2c planes at the edge of the 1st Brillouin zone. In contrast, the experimentally detected low-frequency set of oscillations found around 20 T could not be reproduced by the calculations. Further refinement of the ab-initio calculation has to be conducted to fully capture all the observed features of the Fermi surface in ZrSiS and HfSiS.