Enhancing Third-Generation Solar Cell Efficiency and Stability Through P-Type Silicon Integration: Process Analysis and Performance Evaluation

Abstract

Third-generation solar cells have emerged as a potential solution to the effectiveness and stability issues encountered in conventional solar technology. This study focuses on the characteristics of copper-zinc-tin-sulfide (CZTS) thin films inside this innovative architectural framework, which is an important step toward improving third-generation solar cells by incorporating a p-type silicon layer. This integrated method provides a versatile and manageable setting for film deposition, underscoring the effort put into creating high-quality CZTS thin films. Using X-ray diffraction (XRD), the study assessed the structural change of CZTS films after annealing, finding that kesterite phases were dominant. Images captured by a scanning electron microscope (SEM) reveal the microstructure and surface morphology of CZTS-coated Silicon nanowires (Si-NWs). A detailed analysis of the current-voltage characteristics provides evidence of the operational potential of the Si-NWs-CZTS coated solar cell. Significant performance parameters observed include a Voc value of 0.45 ± 0.02V, Isc value of 8.25 ± 0.30 mA/cm², FF value of 24 ± 2%, and η value of 1.0 ± 0.1%. The encouraging results indicate the capacity of using P-type silicon to enhance the performance of third-generation solar cells.