Abstract
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determined that the height of the potential barrier in thermal annealing structures at T = 200 °C during t = 3 hours occurs due to the decrease in the density of states of local levels located near the Fermi level in the amorphous layer. The mechanism of photosensitivity in an isotype heterostructures was analyzed and it was found that the photosensitivity of the heterojunction increases as a result of a decrease in the surface density of state at the contact boundary of the components, by thermal means. The spectral distribution of the quantum efficiency in the n‑Si – p‑GaSe heterojunction was studied and their perspective was determined.
Publisher
V. N. Karazin Kharkiv National University
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