OBTAINING THE SILICON-CONTAINING TITANIUM PHOSPHATE UNDER HETEROGENEOUS SYNTHESIS CONDITIONS

Abstract

The authors investigated the synthesis of composite materials produced by not simply mixing the components mechanically. The materials are chemically derived on the basis that the combined action of the beneficial properties of such compositions significantly outweighs the action of each component due to synergistic effects. For this purpose, a titanosilicate precursor, TiO2∙nSiO2 (ТSP), synthesized from an accessible technogenic waste containing the mineral titanite (CaSiTiO5) was used. Researches were carried out in the heterogeneous system TiO2∙SiO2-H3PO4-H2O. And the innovative method was developed for obtaining silicon-containing titanophosphate of the composition TiOHPO4∙2H2O or TiO(H2PO4)2·2H2O, depending on the structural features of TSP, as well as on the synthesis conditions - phosphoric acid concentration and temperature. The influence of structural characteristics of titanosilicate precipitate on its chemical activity in heterogeneous synthesis of silicon-containing titanophosphate was studied. The synthesised mesaporous material is a powder with a particle size of 5-15 µm. The correlation between the phase composition of the synthesised compositions and the surface properties of their particles is shown. The sorption capacity of the obtained titanophosphates in the static mode was determined. In particular, the more titanophosphate phase is in the composition of the composition, the higher are the values of Ssp and Vpore particles and therefore their sorption capacity is higher. When comparing the sorption properties of synthesised and conventional sorbents, ion exchange resins and titanium phosphates, used for purification of liquid effluents from Sr2+, Cs+, Co2+ cations, comparable indicators were obtained. The results have shown that the use of silicon-containing titanium phosphate for the treatment of liquid effluents containing non-ferrous metal cations as well as radionuclides may be promising.