USING OF ATOMIC LAYER DEPOSITION METHOD FOR OBTAINING THIN FILMS BASED ON LiMn2O4 AND LiFePO4

Abstract

An approach to the synthesis of LiFePO4 and LiMn2O4 by atomic layer deposition is proposed and successfully implemented. The main regularities of the process are revealed and the method of synthesis realization is proposed. The following reagents were proposed and used: 2,2,6,6-tetramethylheptan-3,5 - dione of manganese, oxygen, iron (II) chloride, trimethyl phosphate, water and lithium tret-butylate. Nitrogen was used as an inert gas for purging the reactor and as a carrier gas. The influence of process parameters on the synthesis of thin films based on LiFePO4 and LiMn2O4 is described. It has been established that the phase composition of the resulting films is influenced by the time of precursor release and the process temperature. It is concluded that the increase in process temperature has a positive effect on the density of thin films of LiFePO4 and LiMn2O4. The optimum deposition temperature of LiFePO4 and LiMn2O4 is 400 ºC. It was shown that it is possible to regulate the content of each element and phase composition in films based on LiFePO4 and LiMn2O4 by changing the time of precursors release. The optimal time for the release of precursors for the synthesis of LiFePO4 and LiMn2O4 is 4 s under the stated conditions. Of great importance is the time of release of oxidizing agents-4 and 6 s for the deposition of LiFePO4 and LiMn2O4, respectively. The correlation of the layer growth rate per cycle was revealed, which was 0.2 nm/cycle for the synthesis of LiFePO4. The film obtained in the process is X-ray amorphous. To obtain the crystal structure, the films were annealed in argon at a temperature of 800 ºC. The mechanism of interaction of precursors with the substrate surface is studied. The influence of substrate activation on the uniformity of film growth is revealed.