FinFET Nanotransistor Downscaling Causes More Short Channel Effects, Less Gate Control, Exponential increase in Leakage Currents, Drastic Process Changes and Unmanageable Power Densities-Reference-Cited by-同舟云学术

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FinFET Nanotransistor Downscaling Causes More Short Channel Effects, Less Gate Control, Exponential increase in Leakage Currents, Drastic Process Changes and Unmanageable Power Densities

Published:2024-08-09 Issue: Volume: Page:
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Author:

Rashid Afshin^ORCID

Publisher

Authorea, Inc.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of: "Since the structure of carbon nanotubes has different values for the production and reproduction of nanotransistors at different temperatures, it is shown as a function of temperature in the form of T(λ)";Qeios;2024-08-28

2. Review of: "This increase in strength does not happen only in the range of a few nanometers, and the strength of materials of several tens or even hundreds of nanometers may be much more than the mass material of a large scale";Qeios;2024-08-28

3. Review of: "CNT carbon nanotubes can be large amounts transfer electric current, much more than graphene nanowires and nanoribbons generally self-aggregate in nanostructures, increasing nanoelectromagnetic interaction (nanoparticles) in conductive nanomaterials and semiconductors";Qeios;2024-08-28

4. Review of: "Nano-reactors are very diverse. Simple or complex, organic and inorganic materials with electrical conductivity, volume, and tissue cavity are used as nano-reactors";Qeios;2024-08-28

5. Review of: "Nano network is a communication network at nano scale between nano devices";Qeios;2024-08-10

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