Author:
Peng T. H.,Lou Y. F.,Jin S. F.,Wang W. Y.,Wang W. J.,Wang G.,Chen X. L.
Abstract
Crystal structure of 4H-SiC was refined from room-temperature X-ray powder diffraction data using the Rietveld refinement method. The refined lattice constants were determined to be a=b=3.079 93(0) Å, c=10.082 22(2) Å, and the refined overall temperature factor B=0.383(3) Å2. Using the Debye approximation, the Debye temperature was successfully determined to be 1194.8 K.
Publisher
Cambridge University Press (CUP)
Subject
Condensed Matter Physics,Instrumentation,General Materials Science,Radiation
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