An X-Ray Fluorescent Spectrometer for the Measurement of Thin Layered Materials on Silicon Wafers

Abstract

The developments in the analysis of low atomic number elements or the measurements of soft and ultrasoft X-rays have been carried out. Using this technology, a measuring method for thinner layered materials has been developed recently. This type of analysis requires a high excitation and wavelength dispersive devices with high reflectivity.On the other side, the film technologies related to electronic and optical devices in the field of semiconductor industry have made a remarkable progress. A variety of layered material thickness in the multilayered structure of LSI is in the range of 100Å and 2μm. It is too thick to be measured by electron methods and too thin to be measured by a regular X-ray method using the X-ray wavelength of 0.2-3Å. Accordingly, it is generally said that the soft and ultrasoft X-ray method should be applied to measure the thickness and composition of layered materials on silicon wafers.