Defining Residual Stresses in Thin Film Structures

Author:

Noyan I. C.

Abstract

AbstractResidual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation has been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.In this paper a review of the definitions of the residual stresses used by the authors in the various disciplines is presented and the mechanisms by which residual stresses may form in thin film systems is discussed.

Publisher

Cambridge University Press (CUP)

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices;Materials Science in Semiconductor Processing;2023-06

2. Evaluation methods for residual stress measurement in large components;Materials Today: Proceedings;2021

3. Stress Measurement;Two-dimensional X-ray Diffraction;2018-06-01

4. Measurement of Residual Stresses in Thin Films by Two-Dimensional XRD;Materials Science Forum;2006-09

5. Calculation of thermally induced strains in thin films of any crystal class;Journal of Applied Physics;1995-07-15

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