Coupling of Metallurgical Method to Remove Impurities in Solar Grade Polycrystalline Silicon-Reference-Cited by-同舟云学术

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Coupling of Metallurgical Method to Remove Impurities in Solar Grade Polycrystalline Silicon

Published:2017 Issue:3 Volume:32 Page:281
ISSN:1000-324X
Container-title:Journal of Inorganic Materials
language:en
Short-container-title:Journal of Inorganic Materials

Author:

Peng-Ting LI,Kai WANG,Da-Chuan JIANG,Shi-Qiang REN,TAN-Yi ,Guang-Ye AN,Lei ZHANG,Xiao-Liang GUO,Feng WANG

Publisher

Shanghai Institute of Ceramics

Subject

Inorganic Chemistry,General Materials Science

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity Aluminum Removal in Industrial Silicon by CaO-SiO2-CaF2 Slagging Refining;Silicon;2023-04-12

2. Analysis of output power change of polycrystalline silicon solar power generation system considering temperature factor;Arabian Journal of Geosciences;2020-09

3. Effects of Co-Doped B and Al on the Improvement of Electrical Properties of Ga and P Contaminated Upgraded Metallurgical-Grade Silicon Materials;Journal of Electronic Materials;2020-01-14

4. Microstructure and conversion efficiency of multicrystalline silicon ingot prepared by upgraded metallurgical grade silicon;Solar Energy Materials and Solar Cells;2018-11

5. Effect of temperature gradient on the diffusion layer thickness of impurities during directional solidification process;Materials Science in Semiconductor Processing;2018-02

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