Optical properties of InGaN/GaN multiquantum wells light-emitting diode with one-dimensional Au nanoparticle grating-Reference-Cited by-同舟云学术

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Optical properties of InGaN/GaN multiquantum wells light-emitting diode with one-dimensional Au nanoparticle grating

Published:2014-06-25 Issue:1 Volume:8 Page:084097
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:en
Short-container-title:J. Nanophoton

Author:

Tu Sheng-Han¹,Ruan Da-Ge²,Tzeng Shien-Der³,Ni I-Chi³,Wang Chih-Ming²

Affiliation:

1. Tainan Science-Based Industrial Park, Genesis Photonics Inc., Tainan 74144, Taiwan

2. National Dong Hwa University, Department of Opto-Electronic Engineering, Hualien 97401, Taiwan

3. National Dong Hwa University, Department of Physics, Hualien 97401, Taiwan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Laser & Photonics Reviews

2. Prospects for LED lighting

3. Solid-State Light Sources Getting Smart

4. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

5. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

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