Formation of silicon carbide defect qubits with optically transparent electrodes and atomic layer deposited silicon oxide surface passivation

Author:

Nayfeh Osama M.,Liu Brad,Sims Patrick C.,Torres Carlos M.,Davidson Bradley M.,Lerum Lance,Romero Hector,Fahem Mohammed,Lasher Mark E.,Leese de Escobar Anna M.,Simonsen Ken,Ramirez Ayax D.,Banks Hunter,Carter Sam G.,Gaskill D. Kurt,Reinecke Thomas L.,Higa Brian,Barua Ripan,Cothern John

Publisher

SPIE

Reference17 articles.

1. Optical polarization of nuclear spins in silicon carbide.;Falk,2015

2. Isolated electron spins in silicon carbide with millisecond coherence times.;Christle,2015

3. Fisher, Kent, Duncan England, Jean-Philippe Maclean, Phillip Bustard, Rune Lausten, Kevin J. Resch, and Benjamin Sussman. “Storage and retrieval of ultrafast single photons using a room-temperature diamond quantum memory.” In CLEO: QELS Fundamental Science, pp. FTh4B-5. Optical Society of America, 2015. DOI: https://doi.org/10.1364/CLEOQELS.2015.FTh4B.5

4. Gomi, Tomohiro, Syuhei Tomizawa, Kohei Ohashi, Kohei M. Itoh, Junko Ishi-Hayase, Hideyuki Watanabe, Hitoshi Umezawa, and Shinichi Shikata. “Position and density control of nitrogen-vacancy centers in diamond using micropatterned substrate for chemical vapor deposition.” In Conference on Lasers and Electro-Optics/Pacific Rim, p. WI1_3. Optical Society of America, 2013. DOI:

5. Negatively charged nitrogen-vacancy centers in a 5 nm thin 12C diamond film.;Ohashi,2013

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