Model for thickness dependence of mobility and concentration in highly conductive zinc oxide-Reference-Cited by-同舟云学术

Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

Published:2013-03-13 Issue:3 Volume:52 Page:033801
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Look David C.¹,Leedy Kevin D.²,Kiefer Arnold²,Claflin Bruce²,Itagaki Naho³,Matsushima Koichi³,Suhariadi Iping³

Affiliation:

1. Wright State University, Semiconductor Research Center, Dayton, OhioAerospace Division, Wyle Laboratories, Dayton, OhioSensors Directorate, Air Force Research Laboratory, Dayton, Ohio

2. Sensors Directorate, Air Force Research Laboratory, Dayton, Ohio

3. Kyushu University, Department of Information Science and Electrical Engineering, Fukuoka, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical properties of La-doped ZnO thin films prepared by spray pyrolysis technique;Physica Scripta;2024-09-04

2. Conformal coating of macroscopic nanoparticle compacts with ZnO via atomic layer deposition;Journal of Vacuum Science & Technology A;2023-12-28

3. Annealing-free fabrication of high-quality indium tin oxide films for free-carrier-based hybrid metal–semiconductor nanophotonics;Scientific Reports;2023-10-28

4. Annealing-free fabrication of high-quality indium tin oxide films for free-carrier-based hybrid metal-semiconductor nanophotonics;2023-08-18

5. Suppression of grain boundary contributions on carrier mobility in thin Al-doped ZnO epitaxial films;Applied Surface Science;2023-07