Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance-Reference-Cited by-同舟云学术

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Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance

Published:2009-02-12 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Ledentsov N. N.,Lott J. A.,Shchukin V. A.,Quast H.,Hopfer F.,Fiol G.,Mutig A.,Moser P.,Germann T.,Strittmatter A.,Karachinsky L. Y.,Blokhin S. A.,Novikov I. I.,Nadtochi A. M.,Zakharov N. D.,Werner P.,Bimberg D.

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition;Applied Physics Letters;2021-05-03

2. Enhancing the quantum confinement effect by means of quaternary AlxGayIn1-x-yAs barrier material in type-I InAs/InxGa1-xAs SML QDs for laser applications;High Power Lasers and Applications;2021-04-18

3. High temperature laser diode based on a single sheet of quantum dots;Semiconductor Science and Technology;2015-08-11

4. Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts;Advanced Materials;2011-09-12

5. New-generation vertically emitting lasers as a key factor in the computer communication era;Physics-Uspekhi;2011-08-31

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