High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography-Reference-Cited by-同舟云学术

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High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Published:2010-03-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Hibino Daisuke,Shindo Hiroyuki,Abe Yuichi,Hojyo Yutaka,Fenger Germain,Do Thuy,Kusnadi Ir,Sturtevant John L.,De Bisschop Peter,Van de Kerkhove Jeroen

Publisher

SPIE

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer;Frontiers of Mechanical Engineering;2024-07-19

2. Precise Pattern Alignment for Die-to-Database Inspection Based on the Generative Adversarial Network;IEEE Transactions on Semiconductor Manufacturing;2022-08

3. CD-SEM Contour Extraction for Complex Features Measurement;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

4. Accurate etch modeling with massive metrology and deep-learning technology;Optical Microlithography XXXIII;2020-03-23

5. Process window limiting hot spot monitoring for high-volume manufacturing;SPIE Proceedings;2016-03-08

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