Single and dual-chip high peak-power semiconductor laser
Author:
Affiliation:
1. KBRwyle (United States)
2. Air Force Research Lab. (United States)
Publisher
SPIE
Reference13 articles.
1. Tunable type II intracavity difference frequency generation at 54 μm in a two chip vertical external cavity surface emitting laser
2. Diode-pumped semiconductor disk laser with intracavity frequency doubling using lithium triborate (LBO)
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5. Imaging with terahertz radiation
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1. 1.9 µJ external-cavity dumped ultra-broad-area semiconductor nanosecond laser;Optics Letters;2023-06-26
2. High peak power GaSb-based VECSELs;Vertical External Cavity Surface Emitting Lasers (VECSELs) XI;2022-03-04
3. 500 W peak power cavity dumped 2 µm GaSb-based VECSEL;Applied Optics;2021-07-13
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