Long-wavelength infrared PπBN photodetectors based on InAs/GaSb type-II superlattice

Author:

Zhi JIANG,Xu-chang ZHOU,un-bin LI,Hai-peng WANG,You-wen HUANG,Yan-hui LI,Chun-zhang YANG,Jin-cheng KONG

Publisher

SPIE

Reference10 articles.

1. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

2. HgCdTe infrared detectors: historical prospect[C];Rogalski,2003

3. Proposal for strained type II superlattice infrared detectors

4. Growth and characterization of Long Wavelength Infrared Type II Superlattice Photodiodes on a 3″ GaSb wafer.[C]//Conference on quantum sensing and nanophotonic devices VIII. Center for Quantum Devices, Electrical Engineering and Computer Science Departement, Northwestern University, Evanston Illinois 60202, USA;Center for Quantum Devices, Electrical Engineering and Computer Science Departement, Northwestern University, Evansto, 2011.

5. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

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