OPC optimization techniques for enabling the reduction of mismatch between overlay metrology and the device pattern cell-Reference-Cited by-同舟云学术

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OPC optimization techniques for enabling the reduction of mismatch between overlay metrology and the device pattern cell

Published:2016-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Kim Shinyoung¹,Park Chanha¹,Jun Jinhyuck¹,Hwang Jaehee¹,Yang Hyunjo¹,Oh Nang-Lyeom²,Park Sean³,Park Chris²,Sun Kyu-Tae²,Zhang Youping³,Tuffy Paul³

Affiliation:

1. SK hynix (Korea, Republic of)

2. ASML-Brion Korea (Korea, Republic of)

3. ASML-Brion US (United States)

Publisher

SPIE

Reference10 articles.

1. H. J. Levinson, Principles of Lithography, SPIE Optical Engineering Press, Bellingham, WA (2001).

2. Impact of lens aberrations on optical lithography

3. Image placement error: closing the gap between overlay and imaging;Eric,2005

4. Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node

5. Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET);Chen,2014

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