Mid-IR light-emitting diodes using InAs, InAs 1-y P x Sb y , and InAs 1-x-y P x Sb y epilayers on InAs (100)-Reference-Cited by-同舟云学术

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Mid-IR light-emitting diodes using InAs, InAs 1-y P x Sb y , and InAs 1-x-y P x Sb y epilayers on InAs (100)

Published:1998-12-04 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Rowell Nelson L.,Yamaguchi Tomuo,Gong X. Y.,Kan Hirofumi

Publisher

SPIE

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method;Materials Science in Semiconductor Processing;2023-11

2. Electrical conduction of C-implanted InAs single crystal;Materials Research Express;2019-02-22

3. Enhancement of below gap transmission of InAs single crystal via suppression of native defects;Materials Research Express;2017-03-13

4. Residual impurities and electrical properties of undoped LEC InAs single crystals;Journal of Semiconductors;2010-04

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