Layout independent leveling (LIL) on NXT:1980Di immersion scanners for enhanced productivity

Author:

van Hoof Bram1,Holscher Arjan1,Gommers Ralf1,Cottaar Jeroen1,Raas Marcel1,Khalek Samah1,van Kemenade Jan1,Voncken Maarten1,de Graaf Roelof1,Oti Elliot1,Weichselbaum Stefan1,Droste Richard1,Lee ByeongSoo2,Chang Chansam2,Kang Young Seog2,Kim Young Ha2,Kong Jeong-Heung2,Jang Jong Hoon2,Nam YoungSun2,Hwang Hyunwoo2

Affiliation:

1. ASML Netherlands B.V. (Netherlands)

2. SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Publisher

SPIE

Reference5 articles.

1. Performance results of a new generation of 300 mm lithography systems;Sluijk,2001

2. The performance advantages of a dual-stage system

3. Method for determining exposure settings, lithographic exposure apparatus, computer program and data carrier;Burry,2012

4. Method and lithographic apparatus for measuring and acquiring height data relating to a substrate surface;Staals,2013

5. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

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