Empirical correlator for stochastic local CD uniformity in extreme ultraviolet lithography
Author:
Affiliation:
1. IMEC, Leuven, Belgium
2. ASML Technology Development Center, Chandler, Arizona, United States
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Arts and Humanities
Reference22 articles.
1. Shot noise, LER, and quantum efficiency of EUV photoresists
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5. Mechanistic simulation of line-edge roughness
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1. Budget Analysis of Multiple Parameters in EUV Lithography System Based on Support Vector Machine;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
2. Optical diffraction-based methodology to measure on-product EUV exposure focus variations;Metrology, Inspection, and Process Control XXXVIII;2024-04-10
3. Dynamic budget analysis of multiple parameters in a lithography system based on the superposition of light intensity fluctuations;Optics Express;2024-01-30
4. Rigorous 3D probabilistic computational lithography and chip-level inspection for EUV stochastic failure detection;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21
5. Stochastic hotspots in extreme ultraviolet exposed nano-patterns as correlated molecular sub-cluster formation probabilities;Journal of Applied Physics;2023-06-15
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