A monolithic 640 × 512 CMOS imager with high-NIR sensitivity-Reference-Cited by-同舟云学术

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A monolithic 640 × 512 CMOS imager with high-NIR sensitivity

Published:2014-06-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lauxtermann Stefan,Fisher John,MacDougal Michael

Publisher

SPIE

Reference18 articles.

1. sCMOS detector for imaging VNIR spectrometry;Eckardt,2013

2. Intercomparison of EMCCD- and sCMOS-based imaging spectrometers for biomedical applications in low-light conditions;Hernandez-Palacios,2012

3. High-speed VGA resolution CMOS image sensor with global shutter;Willems,2012

4. Aptina Imaging, Press Release, Feb 26th, 2013

5. A ¼-inch 8MPixel Back-Illuminated Stacked CMOS Image Sensor;Sukegawa,2013

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1. Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement;Applied Optics;2022-01-28

2. Micrometric laser characterization of a 300μm fully-depleted monolithic active pixel sensor in standard 110 nm CMOS technology;Journal of Instrumentation;2020-06-24

3. Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate;IEEE Transactions on Electron Devices;2020-06

4. Hybridized MAPS with an in-pixel A-to-D conversion readout ASIC;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-08

5. A 110 nm CMOS process for fully-depleted pixel sensors;Journal of Instrumentation;2019-06-17

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