Successful application of angular scatterometry to process control in sub-100-nm DRAM device-Reference-Cited by-同舟云学术

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Successful application of angular scatterometry to process control in sub-100-nm DRAM device

Published:2004-05-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Metrology, Inspection, and Process Control for Microlithography XVIII
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Author:

Kim Jin-ah,Kim Seong-Jin,Chin Soo-Bok,Oh Seok-Hwan,Goo Doo-Hoon,Lee Suk-Joo,Woo Sang-Gyun,Cho Han-Ku,Han Woo-Sung,Moon Joo-Tae,Raymond Christopher J.,Littau Michael E.,Youn Byungjoo J.,Sohn Chang-Jin

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of EUV scatterometer with high-harmonic-generation EUV source for nano-scale grating measurement;SPIE Proceedings;2015-08-20

2. Evaluation of producer’s and consumer’s risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology;Journal of Micro/Nanolithography, MEMS, and MOEMS;2006-10-01

3. In-line CD metrology with combined use of scatterometry and CD-SEM;SPIE Proceedings;2006-03-10

4. Scatterometry-based metrology with feature region signatures matching;Optics Express;2006

5. Performance study of CD mark size for angular scatterometry;SPIE Proceedings;2005-05-10

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