Raster scan patterning solution for 100- and 70-nm OPC masks-Reference-Cited by-同舟云学术

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Raster scan patterning solution for 100- and 70-nm OPC masks

Published:2002-07-31 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Abboud Frank E.,Baik Ki-Ho,Chakarian Varoujan,Cole Damon M.,Dean Robert L.,Gesley Mark A.,Gillman Herb,Moore William C.,Mueller Mark,Naber Robert J.,Newman Thomas H.,Puri Romin,Raymond III Frederick,Rougieri Mario

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation;Nanotechnology;2017-12-22

2. Gray scaling in high performance mask making;SPIE Proceedings;2005-06-28

3. Resists for Mask Making;Handbook of Photomask Manufacturing Technology;2005-04-07

4. Comparative study of two negative CAR resists: EN-024M and NEB 31;SPIE Proceedings;2004-08-20

5. Comparative study between REAP 200 and FEP171 CAR with 50-kV raster e-beam system for sub-100-nm technology;SPIE Proceedings;2003-08-26

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