High-NA EUV lithography exposure tool: program progress-Reference-Cited by-同舟云学术

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High-NA EUV lithography exposure tool: program progress

Published:2020-03-23 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XI
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Author:

Van Schoot Jan,van Setten Eelco,Troost Kars,Lok Sjoerd,Stoeldraijer Judon,Peeters Rudy,Benschop Jos,Zimmerman Joerg,Graeupner Paul,Wischmeier Lars,Kuerz Peter,Kaiser Winfried

Publisher

SPIE

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A global plasma and surface model of hydrogen/methane inductively coupled discharge to analyze hydrocarbon plasma–surface interactions in extreme-ultraviolet lithography machines;Journal of Applied Physics;2024-07-22

2. An idea of two-mask stage for high-NA EUV scanners;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques;Japanese Journal of Applied Physics;2024-03-01

4. Extreme ultraviolet lithography reaches 5 nm resolution;Nanoscale;2024

5. Component Redesigns and The Impact of Their Implementation Policy;2023 Winter Simulation Conference (WSC);2023-12-10

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