Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors
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Publisher
SPIE
Reference23 articles.
1. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
2. Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs
3. High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
4. Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared
5. Quantum-dot infrared photodetectors: Status and outlook
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