High-NA EUV projection lens with central obscuration-Reference-Cited by-同舟云学术

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High-NA EUV projection lens with central obscuration

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Zhevlakov A. P.¹,Seisyan R. P.²,Bespalov V. G.¹,Elizarov V. V.¹,Grishkanich A. S.¹,Kascheev S. V.¹,Bagdasarov A. A.¹,Sidorov I. S.³

Affiliation:

1. ITMO Univ. (Russian Federation)

2. Ioffe Physical Technical Institute (Russian Federation)

3. Univ. of Eastern Finland (Finland)

Publisher

SPIE

Reference6 articles.

1. Extreme-ultraviolet microexposure tool at 05 NA for sub-16 nm lithography

2. 8-mirrors Microlithography Projection Objective. US Pat. No.6,710,917

3. H.K. Glatzel, D. Ashworth, M. Bremer, R. Chin, K. Cummings, L. Girard, M. Goldstein, E.M. Gullikson, R. Hudyma, J. Kennon, R. Kestner, L.A. Marchetti, P.P. Naulleau, R. Soufli, E.A. Spiller// Proc. SPIE V. 8669 (2013). 8679-42

4. High-aperture projection system of a lithographic installation. RU Pat. No.125355

5. Modeling of bi-spectral primary source for the EUV lithography;Zhevlakov,2015

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